DEFECTS AND LIFETIME PREDICTION OF GERMANIUM MOSFETS

To continue improving device speed, much effort has been made to replace Si by high mobility semiconductors. Ge is considered as a strong candidate for pMOSFETs due to the high hole mobility. Two approaches have been demonstrated: high-k/Si-cap/Ge and high-k/GeO2/Ge. Negative Bias Temperature Instability (NBTI) is still one of the main reliability issues, limiting the device lifetime. In this project, it is found that the conventional lifetime prediction method developed for Si is inapplicable to Ge devicesand defect properties in Ge and Si MOSFETs are different.The threshold voltage degradation in Ge can be nearly 100% recovered under a much lower temperature than that in Si devices. The defect losses observed in Si devices were absent in Ge/GeO2/Al2O3. The generation of interface states is insignificant and the positive charges in GeO2/Al2O3 on Ge dominate the NBTI. These positive charges do not follow the same model as those in SiON/Si and an energy-alternating model has been proposed: there are a spread of energy levels of neutral hole traps below Ev andthey lift up after charging, and return below Ev after neutralization.The energy distribution of positive charges in the Al2O3/GeO2/Ge gate stack was studied by the Discharge-based Multi-pulse (DMP) Technique. The different stress-time dependence of defects below Ev and around Ec indicates that they originate from different defects. Quantization effect, Fermi level pinning, and discharge voltage step were considered. The defect differences in terms of the energy level were investigated by using the DMP technique and the energy alternating model is verified by the defect energy distribution.Based on the understanding of different defect behavior, a new NBTI lifetime prediction method was developed for Ge MOSFETs. Energy alternating defects were separated from as-grown hole traps (AHT), which enables to restore the power law for NBTI kinetics with a constant power exponent. The newly developed Ge method was applicable for NBTI lifetime prediction of the state-of-the-art Si-cap/Ge and GeO2/Ge MOSFETs. When compared with SiON/Si, the optimized Si-cap/Ge shows superior reliability, while GeO2/Ge is inferior and needs further optimization. Preliminary characterization was also carried out to investigate the impacts of energy levels and characteristic times of different defects on the frequency and duty factor dependence of AC NBTI degradation

Selective Inhibition of Plasmodium falciparum ATPase 6 by Artemisinins and Identification of New Classes of Inhibitors after Expression in Yeast

Treatment failures with artemisinin combination therapies (ACTs) threaten global efforts to eradicate malaria. They highlight the importance of identifying drug targets and new inhibitors and of studying how existing antimalarial classes work. Here, we report the successful development of a heterologous expression-based compoundscreening tool. The validated drug target Plasmodium falciparum ATPase 6 (PfATP6) and a mammalian orthologue (sarco/endoplasmic reticulum calcium ATPase 1a [SERCA1a]) were functionally expressed in Saccharomyces cerevisiae, providing a robust, sensitive, and specific screening tool. Whole-cell and in vitro assays consistently demonstrated inhibition and labeling of PfATP6 by artemisinins. Mutations in PfATP6 resulted in fitness costs that were ameliorated in the presence of artemisinin derivatives when studied in the yeast model. As previously hypothesized, PfATP6 is a target of artemisinins. Mammalian SERCA1a can be mutated to become more susceptible to artemisinins. The inexpensive, low-technology yeast screening platform has identified unrelated classes of druggable PfATP6 inhibitors. Resistance to artemisinins may depend on mechanisms that can concomitantly address multitargeting by artemisinins and fitness costs of mutations that reduce artemisinin susceptibility

Laser-Induced Above-Bandgap Transparency in GaAs

We report the observation of large ($\sim 40$) laser-induced above-bandgap transparency in GaAs at room temperature. The induced transparency is present only during the pulse width of the driving midinfrard laser pulses and its spectral shape is consistent with a laser-induced blue shift of the band edge. Our simulations based on the dynamic Franz-Keldysh effect reproduce the salient features of the experimental results, demonstrating in particular that the amount of the band edge shift is approximately given by the ponderomtive potential.Comment: 4 pages, 4 figure

Impact of damping on the superconducting gap dynamics induced by intense terahertz pulses

We investigate the interplay between coherent gap dynamics and damping in superconductors taken out of equilibrium by strong optical pulses with subgap terahertz frequencies. A semiphenomenological formalism is developed to include the damping within the electronic subsystem that arises from effects beyond Bardeen-Cooper-Schrieffer mean-field theory, such as interactions between Bogoliubov quasiparticles and decay of the Higgs mode. These processes, conveniently expressed as longitudinal T1 and transverse T2 relaxation times in the standard pseudospin language for superconductors, cause the gap amplitude to be suppressed after the pulse is turned off, but before the timescale where thermalization occurs due to coupling to the lattice. We show that our model quantitatively captures the experimental gap dynamics reported here of NbN and Nb3Sn through the picosecond timescale

Selective Inhibition of Plasmodium falciparum ATPase 6 by Artemisinins and Identification of New Classes of Inhibitors after Expression in Yeast

Treatment failures with artemisinin combination therapies (ACTs) threaten global efforts to eradicate malaria. They highlight the importance of identifying drug targets and new inhibitors and of studying how existing antimalarial classes work. Here, we report the successful development of a heterologous expression-based compound-screening tool. The validated drug target Plasmodium falciparum ATPase 6 (PfATP6) and a mammalian orthologue (sarco/endoplasmic reticulum calcium ATPase 1a [SERCA1a]) were functionally expressed in Saccharomyces cerevisiae, providing a robust, sensitive, and specific screening tool. Whole-cell and in vitro assays consistently demonstrated inhibition and labeling of PfATP6 by artemisinins. Mutations in PfATP6 resulted in fitness costs that were ameliorated in the presence of artemisinin derivatives when studied in the yeast model. As previously hypothesized, PfATP6 is a target of artemisinins. Mammalian SERCA1a can be mutated to become more susceptible to artemisinins. The inexpensive, low-technology yeast screening platform has identified unrelated classes of druggable PfATP6 inhibitors. Resistance to artemisinins may depend on mechanisms that can concomitantly address multitargeting by artemisinins and fitness costs of mutations that reduce artemisinin susceptibility

One- and two-dimensional photo-imprinted diffraction gratings for manipulating terahertz waves

Emerging technology based on artificial materials containing metallic structures has raised the prospect for unprecedented control of terahertz waves through components like filters, absorbers and polarizers. The functionality of these devices is static by the very nature of their metallic or polaritonic composition, although some degree of tunability can be achieved by incorporating electrically biased semiconductors. Here, we demonstrate a photonic structure by projecting the optical image of a metal mask onto a thin GaAs substrate using a femtosecond pulsed laser source. We show that the resulting high-contrast pattern of photo- excited carriers can create diffractive elements operating in transmission. With the metal mask replaced by a digital micromirror device, our photo-imprinted photonic structures provide a route to terahertz components with reconfigurable functionality.Comment: 12 pages, 5 figure